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? semiconductor components industries, llc, 2016 november, 2016 ? rev. 21 1 publication order number: ncv8402/d ncv8402, ncv8402a self-protected low side driver with temperature and current limit ncv8402/a is a three terminal protected low?side smart discrete device. the protection features incl ude overcurrent, overtemperature, esd and integrated drain?to?gate clamping for overvoltage protection. this device offers protection and is suitable for harsh automotive environments. features ? short?cir cuit protection ? thermal shutdown with automatic restart ? overvoltage protection ? integrated clamp for inductive switching ? esd protection ? ncv8402amnwt1g ? wettable flanks product ? dv/dt robustness ? analog drive capability (logic level input) ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial drain source temperature limit gate input current limit current sense overvoltage protection esd protection www. onsemi.com *max current limit value is dependent on input condition. sot?223 case 318e style 3 marking diagrams v (br)dss (clamped) r ds(on) typ i d max 42 v 165 m @ 10 v 2.0 a* a = assembly location y = year w or ww = work week xxxxx = v8402 or 8402a = pb?free package 1 (note: microdot may be in either location) 1 ayw xxxxx 23 4 gate drain source drain 2 3 4 dfn6 case 506ax xxxxx ayww 1 see detailed ordering and shipping information on page 11 o f this data sheet. ordering information dfn6 package pin description *pins 4, 5, 6 are internally shorted together. it is recommended to short these pins externally. gncnc 7 epad sss 123 654 pin # symbol description 1 g gate input 2 nc no connect 3 nc no connect 4 s* source 5 s* source 6 s* source 7 epad drain 1 1 dfn6 (wf) case 506dk xxxxx ayww 1
ncv8402, ncv8402a www. onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage internally clamped v dss 42 v drain?to?gate voltage internally clamped (r g = 1.0 m ) v dgr 42 v gate?to?source v oltage v gs 14 v continuous drain current i d internally limited total power dissipation ? sot?223 version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t s = 25 c) p d 1.1 1.7 8.9 w total power dissipation ? dfn version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t s = 25 c) p d 0.76 1.7 8.9 w maximum continuous drain current ? sot?223 version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t s = 25 c) i d 2.37 2.98 6.75 a maximum continuous drain current ? dfn version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t s = 25 c) i d 1.98 3.02 6.75 a thermal resistance sot223 junction?to?ambient steady state (note 1) sot223 junction?to?ambient steady state (note 2) sot223 junction?to?soldering point steady state dfn junction?to?ambient steady state (note 1) dfn junction?to?ambient steady state (note 2) dfn junction?to?soldering point steady state r ja r ja r js r ja r ja r js 114 72 14 163 70 14 c/w single pulse drain?to?source avalanche energy (v dd = 32 v, v g = 5.0 v, i pk = 1.0 a, l = 300 mh, r g(ext) = 25 ) e as 150 mj load dump voltage (v gs = 0 and 10 v, r i = 2.0 , r l = 9.0 , t d = 400 ms) v ld 55 v operating junction temperature t j ?40 to 150 c storage temperature t stg ?55 to 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. surface?mounted onto min pad fr4 pcb, (2 oz. cu, 0.06 thick). 2. surface?mounted onto 2 sq. fr4 board (1 sq., 1 oz. cu, 0.06 thick). drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
ncv8402, ncv8402a www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter test condition symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 3) v gs = 0 v, i d = 10 ma, t j = 25 c v (br)dss 42 46 55 v v gs = 0 v, i d = 10 ma, t j = 150 c (note 5) 40 45 55 zero gate voltage drain current v gs = 0 v, v ds = 32 v, t j = 25 c i dss 0.25 4.0 a zero gate voltage drain current v gs = 0 v, v ds = 32 v, t j = 150 c (note 5) i dss 1.1 20 a gate input current v ds = 0 v, v gs = 5.0 v i gssf 50 100 a on characteristics (note 3) gate threshold voltage v gs = v ds , i d = 150 a v gs(th) 1.3 1.8 2.2 v gate threshold temperature coefficient v gs(th) /t j 4.0 ?mv/ c static drain?to?source on?resistance v gs = 10 v, i d = 1.7 a, t j = 25 c r ds(on) 165 200 m v gs = 10 v, i d = 1.7 a, t j = 150 c (note 5) 305 400 v gs = 5.0 v, i d = 1.7 a, t j = 25 c 195 230 v gs = 5.0 v, i d = 1.7 a, t j = 150 c (note 5) 360 460 v gs = 5.0 v, i d = 0.5 a, t j = 25 c 190 230 v gs = 5.0 v, i d = 0.5 a, t j = 150 c (note 5) 350 460 source?drain forward on voltage v gs = 0 v, i s = 7.0 a v sd 1.0 v switching characteristics (note 5) turn?on delay time (10% v in to 90% i d ) v gs = 10 v, v dd = 12 v, i d = 2.5 a, r l = 4.7 td (on) 25 30 s turn?on rise time (10% i d to 90% i d ) t rise 120 200 s turn?off delay time (90% v in to 10% i d ) td (off) 20 25 s turn?off fall time (90% i d to 10% i d ) t fall 50 70 s slew?rate on (70% to 50% v dd ) ?dv ds /dt on 0.8 1.2 v s slew?rate off (50% to 70% v dd ) dv ds /dt off 0.3 0.5 v s self protection characteristics (t j = 25 c unless otherwise noted) (note 4) current limit v ds = 10 v, v gs = 5.0 v, t j = 25 c i lim 3.7 4.3 5.0 a v ds = 10 v, v gs = 5.0 v, t j = 150 c (note 5) 2.3 3.0 3.7 v ds = 10 v, v gs = 10 v, t j = 25 c 4.2 4.8 5.4 v ds = 10 v, v gs = 10 v, t j = 150 c (note 5) 2.7 3.6 4.5 temperature limit (turn?off) v gs = 5.0 v (note 5) t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 v t lim(on) 15 temperature limit (turn?off) v gs = 10 v (note 5) t lim(off) 150 165 185 thermal hysteresis v gs = 10 v t lim(on) 15 gate input characteristics (note 5) device on gate input current v gs = 5 v i d = 1.0 a i gon 50 a v gs = 10 v i d = 1.0 a 400 3. pulse test: pulse width 300 s, duty cycle 2%. 4. fault conditions are viewed as beyond the normal operating range of the part. 5. not subject to production testing.
ncv8402, ncv8402a www. onsemi.com 4 electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min symbol test condition gate input characteristics (note 5) current limit gate input current v gs = 5 v, v ds = 10 v i gcl 0.05 ma v gs = 10 v, v ds = 10 v 0.4 thermal limit fault gate input current v gs = 5 v, v ds = 10 v i gtl 0.15 ma v gs = 10 v, v ds = 10 v 0.7 esd electrical characteristics (t j = 25 c unless otherwise noted) (note 5) electro?static discharge capability human body model (hbm) esd 4000 v machine model (mm) 400 3. pulse test: pulse width 300 s, duty cycle 2%. 4. fault conditions are viewed as beyond the normal operating range of the part. 5. not subject to production testing. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
ncv8402, ncv8402a www. onsemi.com 5 typical performance curves 1 10 10 100 figure 2. single pulse maximum switch?off current vs. load inductance l (mh) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 10 1 00 figure 3. single pulse maximum switching energy vs. load inductance l (mh) e max (mj) t jstart = 25 c t jstart = 150 c 0.1 1 10 110 figure 4. single pulse maximum inductive switch?off current vs. time in clamp time in clamp (ms) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 11 0 figure 5. single pulse maximum inductive switching energy vs. time in clamp time in clamp (ms) e max (mj) t jstart = 25 c t jstart = 150 c figure 6. on?state output characteristics 0 1 2 3 4 5 1234 5 v ds = 10 v 25 c 100 c 150 c ?40 c i d (a) v gs (v) figure 7. transfer characteristics v ds (v) i d (a) v gs = 2.5 v 3 v 4 v 5 v 6 v 8 v 10 v t a = 25 c 0 1 2 3 4 5 6 7 8 012345 3.5 v
ncv8402, ncv8402a www. onsemi.com 6 typical performance curves 0 100 200 300 400 45678910 figure 8. r ds(on) vs. gate?source voltage v gs (v) r ds(on) (m ) 150 c, i d = 0.5 a 150 c, i d = 1.7 a 100 c, i d = 0.5 a 100 c, i d = 1.7 a 25 c, i d = 0.5 a 25 c, i d = 1.7 a ?40 c, i d = 0.5 a ?40 c, i d = 1.7 a 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 150 c, v gs = 10 v 150 c, v gs = 5 v 100 c, v gs = 5 v 100 c, v gs = 10 v 25 c, v gs = 5 v 25 c, v gs = 10 v ?40 c, v gs = 5 v ?40 c, v gs = 10 v figure 9. r ds(on) vs. drain current i d (a) r ds(on) (m ) 0.5 0.75 1 1.25 1.5 1.75 2 ?40 ?20 0 20 40 60 80 100 120 140 v gs = 5 v v gs = 10 v i d = 1.7 a figure 10. normalized r ds(on) vs. temperature t ( c) r ds(on) (normialzized) 2 3 4 5 6 7 8 5678910 25 c 100 c 150 c ?40 c figure 11. current limit vs. gate?source voltage v gs (v) i lim (a) v ds = 10 v 2 3 4 5 6 7 8 ?40 ?20 0 20 40 60 80 100 120 140 figure 12. current limit vs. junction temperature t j ( c) i lim (a) v ds = 10 v v gs = 5 v v gs = 10 v 0.0001 0.001 0.01 0.1 1 10 10 15 20 25 30 35 40 figure 13. drain?to?source leakage current v ds (v) i dss ( a) v gs = 0 v 25 c 100 c 150 c ?40 c
ncv8402, ncv8402a www. onsemi.com 7 typical performance curves 0.6 0.7 0.8 0.9 1 1.1 1.2 ?40 ?20 0 20 40 60 80 100 120 140 figure 14. normalized threshold voltage vs. temperature t ( c) normalized v gs(th) (v) i d = 150 a v gs = v ds 0.5 0.6 0.7 0.8 0.9 1 1.1 1234567891 0 figure 15. source?drain diode forward characteristics i s (a) v sd (v) 25 c 100 c 150 c ?40 c v gs = 0 v 0 50 100 150 200 345678910 t d(off) t d(on) t f t r figure 16. resistive load switching time vs. gate?source voltage v gs (v) time ( s) i d = 2.5 a v dd = 12 v r g = 0 0 0.2 0.4 0.6 0.8 1 34567891 0 figure 17. resistive load switching drain?source voltage slope vs. gate?source voltage v gs (v) drain?source voltage slope (v/ s) i d = 2.5 a v dd = 12 v r g = 0 ?dv ds /d t(on) dv ds /d t(off) 0 25 50 75 100 0 400 800 1200 1600 2000 time ( s) figure 18. resistive load switching time vs. gate resistance r g ( ) t f , (v gs = 10 v) t f , (v gs = 5 v) t d(off) , (v gs = 10 v) t r , (v gs = 5 v) t d(off) , (v gs = 5 v) t r , (v gs = 10 v) t d(on) , (v gs = 5 v) t d(on) , (v gs = 10 v) i d = 2.5 a v dd = 12 v 0 0.2 0.4 0.6 0.8 1 0 500 1000 1500 200 0 dv ds /d t(off) , v gs = 5 v ?dv ds /d t(on) , v gs = 10 v ?dv ds /d t(on) , v gs = 5 v dv ds /d t(off) , v gs = 10 v figure 19. drain?source voltage slope during turn on and turn off vs. gate resistance r g ( ) drain?source voltage slope (v/ s) i d = 2.5 a v dd = 12 v
ncv8402, ncv8402a www. onsemi.com 8 typical performance curves 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse 50% duty cycle 20% 10% 5% 2% 1% pulse width (sec) r ja 788 mm 2 c/w figure 20. transient thermal resistance ? sot?223 package 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse 50% duty cycle 20% 10% 5% 2% 1% pulse width (sec) r ja 788 mm 2 c/w figure 21. transient thermal resistance ? dfn package
ncv8402, ncv8402a www. onsemi.com 9 test circuits and waveforms dut g d s rl vdd ids vin figure 22. resistive load switching test circuit rg + ? t on vin ids t off 10% 10% 90% 90% figure 23. resistive load switching waveforms 10% 90% vds
ncv8402, ncv8402a www. onsemi.com 10 test circuits and waveforms vdd ids vin l vds tp figure 24. inductive load switching test circuit dut g d s rg + ? 0 v 5 v t av vin ids vds t p v ds(on) i pk 0 vdd v (br)dss figure 25. inductive load switching waveforms
ncv8402, ncv8402a www. onsemi.com 11 table 1. ordering information device package shipping ? NCV8402STT1G sot?223 (pb?free) 1000 / tape & reel ncv8402astt1g ncv8402stt3g sot?223 (pb?free) 4000 / tape & reel ncv8402astt3g ncv8402amnt2g dfn6 (pb?free) 2000 / tape & reel ncv8402amnwt1g dfn6 (pb?free, wettable flank) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. package dimensions sot?223 (to?261) case 318e?04 issue n style 3: pin 1. gate 2. drain 3. source 4. drain a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ???
ncv8402, ncv8402a www. onsemi.com 12 package dimensions dfn6 3x3.3, 0.95 pitch case 506ax issue o *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* ???? ???? ???? ???? c 0.15 2x 2x top view d e c 0.15 notes: 1. dimensions and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. e2 bottom view b 0.10 6x l 13 0.05 c ab c d2 4x e l1 64 6x 6x (a3) c c 0.08 6x c 0.10 side view a1 a seating plane dim min nom max millimeters a 0.80 ??? 0.90 a1 0.00 ??? 0.05 a3 0.20 ref b 0.30 ??? 0.40 d 3.00 bsc d2 1.90 ??? 2.10 e 3.30 bsc e2 1.10 ??? 1.30 e 0.95 bsc k 0.20 ??? ??? l 0.40 ??? 0.60 (note 3) k l1 0.00 ??? 0.15 6x 0.83 2.15 1.35 1 0.50 0.95 pitch 3.60 dimensions: millimeters 6x
ncv8402, ncv8402a www. onsemi.com 13 package dimensions dfn6 3x3, 0.95p case 506dk issue o ???? ???? ???? soldering footprint* pin 1 reference a b c 0.10 2x 2x top view d e c 0.10 notes: 1. dimensions and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimesnion b applies to plated terminal and is measured between 0.15 and 0.20 mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. e2 bottom view b 0.10 6x l 13 0.05 c ab c d2 e 64 6x a3 c c 0.05 c 0.10 side view a seating plane dim min max millimeters a 0.75 0.95 a1 0.00 0.05 a3 0.20 ref b 0.35 0.45 d 3.00 bsc d2 2.40 2.60 e 3.00 bsc e2 1.50 1.70 e 0.95 bsc a4 0.05 0.15 l 0.30 0.50 note 3 detail b 2.70 3.30 0.95 0.50 6x 1.80 dimensions: millimeters 1 0.60 6x l3 section c?c a1 a4 detail b plated l3 0.00 0.10 pitch package outline note 4 recommended c c surface plated surface on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8402/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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